Headline News | Most Popular | SoC News Alerts | RSS Feeds

MoSys Licenses 1T-SRAM for Advanced 55NM Process Technology to NEC Electronics

	E-mail Save Print
	Related News
	MoSys Ports 1T-SRAM-Q Technology to NEC Electronics' 90-Nanometer Logic Process; Initial Silicon Verification Achieved for 1T-SRAM-R, in Fabrication for 1T-SRAM-Q Fujitsu Licenses MoSys 1T-SRAM(R) Technology for Its Leading-Edge 65nm Semiconductor Manufacturing Process NEC Electronics Embeds MoSys' 1T-SRAM Memory Technology in 90nm Custom ASIC; Companies Extend Agreement To Use 1T-SRAM In Upcoming Consumer Applications AVID Electronics Licenses MoSys' 1T-SRAM Embedded Memory; SoC Design Company Uses 1T-SRAM Memory in Consumer Electronic Products MoSys Licenses Advanced 1T-SRAM Embedded Memory to Agilent Technologies
	Related
	MoSys, Inc. Silicon IPs MoSys, Inc. Latest News
	MoSys, Inc. Hot IPs
	1.0-Mbit (1,048,576 bits), low-power, embedded 1T-SRAM macro Improve performance, space and power consumption in SATA I and SATA II controlle ... Gigabit Ethernet Physical Layer DVD mixed-signal front end IP supporting Blu-ray and HD formats More ...
	Breaking News
	TSMC's Chang: IC downturn will be 'tough' Ultra-low power 16-bit microcontroller core consumes less than 40 uA per MIPS. MOSAID Reports Results for Second Quarter Fiscal 2009 and Dividend Cadence Announces Appointments of R&D and Worldwide Field Operations Leaders Xilinx Offers First 5Gbps FPGA-Based Solution Compliant With PCI Express Version 2.0
	Most Popular (Updated Daily)
	1 POWERVR SGX520, the world’s smallest OpenGL ES 2.0 core achieves Khronos conformance 2 ARM Gives Thumbs Up For On2's Video Codec Solutions 3 Ultra-low power 16-bit microcontroller core consumes less than 40 uA per MIPS. 4 ARM Unveils IP Portfolio Program - New Model for ARM IP 5 Cadence Announces Appointments of R&D and Worldwide Field Operations Leaders See the Top 20 >>

Technology to Help Drive New Advances in IC Products for Innovative Consumer, Networking, Graphics Applications

SUNNYVALE, CA -- May 23, 2007 -- MoSys, Inc., the industry's leading provider of high-density system-on-chip (SoC) embedded memory intellectual property (IP), today announced that NEC Electronics (TSE: 6723) has licensed MoSys' 1T-SRAM technology for use in the semiconductor manufacturer's cutting-edge 55-nm process. The combination of Mosys' 1T-SRAM and NEC Electronics' 55-nm embedded DRAM process technology can produce integrated circuit (IC) devices with the low cost and low power consumption characteristics needed to enable next-generation consumer products. The high-speed attributes of the MoSys 1T-SRAM also enables the technology to address high-performance networking and graphics applications.

"The move to 55-nm is further evidence of the rapid scalability of our 1T-SRAM technology. We have been able to continuously scale this technology from 250nm to the current 55nm node. We will continue to rapidly scale to 45nm and beyond," said Chet Silvestri, president and CEO of MoSys. "This scalability ensures our customers will have access to our high density memory technology in the industry's most advanced process technologies. Extending our partnership with NEC Electronics to include 55nm is an important milestone in delivering on this promise."

About MoSys Inc.

Founded in 1991, MoSys develops, licenses and markets industry-leading embedded memory IP for semiconductors. MoSys patented 1T-SRAM offers a combination of high density, low power consumption, high speed and low cost unmatched by other memory technologies. MoSys licensees have shipped more than 110 million chips incorporating 1T-SRAM, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered in Silicon Valley with a design center in Korea. More information is available at www.mosys.com.

Contact MoSys, Inc. Fill out this form for contacting a MoSys, Inc. representative. Your Name: Your E-mail address: Your Company address: Your Phone Number: Write your message:

E-mail This Article

Printer-Friendly Page