Foundries News
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TSMC July 2009 Sales Report (Monday Aug. 10, 2009)
TSMC today announced its net sales for July 2009: on an unconsolidated basis, net sales were approximately NT$30.28 billion, an increase of 17.5 percent over June 2009 and a decrease of 1.9 percent from July 2008.
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IDT and TSMC Enter Product Fabrication Agreement (Friday Aug. 07, 2009)
IDT to Move from Fab-lite to Fab-less Model by Transferring Internal Fabrication Processes to TSMC
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Dongwoon Anatech Selects Tower Semiconductor as Sole Manufacturing Partner for High Volume LED Lighting Devices (Wednesday Aug. 05, 2009)
Dongwoon Anatech today announced it has selected Tower Semiconductor as its sole manufacturing partner for high volume, energy saving LED lighting devices used in both home and industrial applications.
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Medigus and Tower Semiconductor Announce World's Smallest Medical Video Camera Based on Advanced CMOS Image Sensor (Monday Aug. 03, 2009)
Medigus and Tower Semiconductor today announced successful sampling of a new CMOS imager that will serve in Medigus' line of disposable miniature cameras and its new medical devices camera; the smallest of its kind in the world, designated to be incorporated into disposable endoscopes or used in various diagnostic and surgical medical applications.
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TSMC Reports Second Quarter EPS of NT$0.94 (Thursday Jul. 30, 2009)
TSMC today announced consolidated revenue of NT$74.21 billion, net income of NT$24.44 billion for the second quarter ended June 30, 2009.
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GLOBALFOUNDRIES Announces Strategic Customer Engagement with STMicroelectronics (Wednesday Jul. 29, 2009)
GLOBALFOUNDRIES today announced a strategic customer relationship with STMicroelectronics. ST will partner with GLOBALFOUNDRIES to produce products based on 40nm Low Power (LP) bulk silicon technology.
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MOSIS Marks Expanded Semiconductor Foundry Offerings With Shuttle Runs for Silicon-On-Insulator (SOI) (Wednesday Jul. 29, 2009)
The MOSIS Service today announced that it has expanded its relationship with IBM to now include silicon-on-insulator (SOI) technology at multiple advanced lithography nodes. MOSIS is offering IBM's 45-nm SOI technology on 300mm wafers and IBM's 180-nm SOI technology on 200mm wafers.
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austriamicrosystems to manufacture Triad Semiconductor's Via-Configurable SoC Solution (Tuesday Jul. 28, 2009)
Triad selects austriamicrosystems advanced analog specialty 0.35µm CMOS embedded EEPROM process for its Via-Configurable Arrays (VCA) containing an advanced 32-bit processor
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SMIC 130nm Process Used in Commercial Production of DisplayLink USB Graphics Chips (Monday Jul. 27, 2009)
SMIC today announced the successful commercial production of a 130nm family of DisplayLink USB graphics chips designed by DisplayLink and manufactured at SMIC.
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Grace announces a new cost-effective platform of 0.18um OTP for speech IC and micro controller (Friday Jul. 24, 2009)
Grace Semiconductor Manufacturing Corporation (Grace), one of the leading semiconductor foundries in differentiated technologies, announced the availability of its 0.18um cost effective OTP (One Time Programmable) process platform.
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TSMC Extends Design Methodology Leadership to 28nm with Reference Flow 10.0 (Wednesday Jul. 22, 2009)
Reference Flow 10.0 is one of the key collaborative components of the Open Innovation Platform™. The newest generation of the company’s reference flow addresses new design challenges of 28nm process technology and delivers innovations to enable System-in-Package (SiP) design.
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TSMC Launches Unified Physical Verification Format for Advanced Process Technologies (Tuesday Jul. 21, 2009)
TSMC today unveiled interoperable design rule check (iDRC) and layout-versus-schematic (iLVS), two unified electronic design automation (EDA) data formats, for TSMC 40 nanometer (nm) process technology.
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Chartered Begins Production Ramp of Enhanced 65nm Low-Power Process; Improves Power Utilization by 30-50 Percent (Thursday Jul. 16, 2009)
Chartered today announced the general availability of an enhanced version of its 65-nanometer (nm) low-power (LP) process, called 65nm LPe. The process is also supported by a robust range of IP specifically optimized for the lower leakage capabilities.
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NetLogic Microsystems and TSMC Collaborate on Industry-Leading 40nm Technology for Next-Generation Knowledge-based Processors and 10/40/100 Gigabit Physical Layer Solutions (Thursday Jul. 16, 2009)
NetLogic Microsystems Successfully Migrates Multiple Product Lines to TSMC’s Advanced 40nm Technology Node to offer customers significantly higher performance, lower power consumption and advanced features that enable next-generation networking, communications, data center, security and storage applications
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Chartered Offers 65nm RF Platform to Enable Single-Chip Wireless Applications (Monday Jul. 13, 2009)
The Chartered process offering, jointly developed with IBM, is based on Chartered’s enhanced 65nm low-power process (65nm LPe), and includes an IBM RF physical design kit (PDK) available from Chartered.
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TSMC June 2009 Sales Report (Friday Jul. 10, 2009)
TSMC today announced its net sales for June 2009: on an unconsolidated basis, sales were approximately NT$25.78 billion, an increase of 5.3 percent over May 2009 and a decrease of 9.6 percent from June 2008.
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Panavision Imaging and Tower Semiconductor Announce Production of World's Fastest Single Port Re-Configurable Linear Image Sensors (Thursday Jul. 02, 2009)
Panavision Imaging and Tower Semiconductor today announced production of Panavision’s family of DLIS-2K re-configurable line scan CMOS image sensors. The DLIS-2K sensors were developed using Tower’s Advanced Photo Diode (APD) pixel process and pixel IP with Panavision’s patented Imager Architecture.
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SMIC Achieves Silicon Success with High Performance 45-nanometer Process (Tuesday Jun. 30, 2009)
SMIC today announced the successful completion of its first 45-nanometer high performance (GP, generic process with high performance) yield lot.
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SMIC Revises Up Second Quarter 2009 Quarter-on-Quarter Revenue Guidance (Monday Jun. 29, 2009)
SMIC announces today an upward revision of Q2 revenue guidance for the three months ended June 30, 2009
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TSMC Enhances 0.13um Family (Monday Jun. 29, 2009)
The 0.13μm/0.11μm family now includes a slim standard cell, SRAM and I/O with substantial area reduction and the 0.13um process also adopts LD-MOS (5V~20V) on RF platforms to enable analog and power management applications.
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Tower Semiconductor to Manufacture Next-Generation MRAM from Crocus Technology (Thursday Jun. 18, 2009)
Crocus Technology and Tower Semiconductor today announced an agreement to port Crocus’ MRAM process technology into Tower’s manufacturing environment. In addition to collaborating on the process port, Tower further reaffirmed the value it sees in Crocus’ unique MRAM technology by taking an equity position valued at $1.25 million.
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NEC Electronics and Toshiba Extend Chip Technology Development Agreements with IBM (Thursday Jun. 18, 2009)
IBM, NEC Electronics and Toshiba announced that NEC and Toshiba have extended technology development agreements with IBM to participate in the development of a 28-nanometer (nm), high-k metal gate (HKMG), low-power chip technology geared for consumer products.
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TSMC Reports Foundry's First 28 Nanometer Low Power Platform Technology with Fully Functional 64Mb SRAM (Wednesday Jun. 17, 2009)
TSMC today announced it has successfully developed the first 28-nanometer (nm) low power technology that continues the scaling trend and extends Silicon Oxynitride (SiON)/poly usage beyond 32 nanometer with a dual/triple gate oxide process.
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Soitec's 300mm Ultra-Thin SOI Ready to Support Mainstream Ramp Up of Fully Depleted Applications at 22nm Node (Tuesday Jun. 16, 2009)
The Soitec Group announced today that its 300mm ultra-thin SOI (UTSOI) wafer platform is qualified and ready to support fully depleted (FD) device applications scheduled on the industry’s CMOS roadmaps for 22nm and beyond.
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Jazz Semiconductor Achieves ISO/TS 16949 Automotive Quality Management System Certification (Wednesday Jun. 10, 2009)
Jazz Semiconductor announced its ISO/TS 16949 certification, the highest international quality standard for the automotive industry.
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TSMC May 2009 Sales Report (Wednesday Jun. 10, 2009)
TSMC today announced its net sales for May 2009: on an unconsolidated basis, sales were approximately NT$24.47 billion, an increase of 12.6 percent over April 2009 and a decrease of 15.6 percent from May 2008.
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X-FAB Releases First 0.18 Micrometer Foundry Solution for Integrated Hall Sensors (Wednesday Jun. 10, 2009)
X-FAB today announced the industry’s first foundry process for the production of integrated Hall sensor ICs in 0.18 micrometer technology. Its 0.18 micrometer low-power CMOS process, known as XH018, allows the combination of Hall sensor elements with high-voltage devices and Non-Volatile Memory (NVM) options.
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SMIC and CHINGIS Announce Availability of 0.18um Embedded Flash Process Technology and IP Portfolio (Tuesday Jun. 02, 2009)
SMIC and Chingis Technology announced today the availability of SMIC's 0.18um embedded flash memory process technology and IP portfolio. SMIC's 0.18um embedded flash process, the product of a close collaboration between a pioneering foundry and an expert in embedded non-volatile memory, is based on the third generation of Chingis's patented 2T PMOS flash (pFLASH(TM)) architecture, and is fully qualified and ready for mass production.
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TSMC Launches Unified Interconnect Modeling Format for Advanced Process Technologies (Wednesday May. 27, 2009)
TSMC today unveiled iRCX, an interoperable electronic design automation (EDA) data format, for TSMC 65 nanometer (nm) and 40nm technologies. iRCX format unifies interconnect modeling data delivery, ensures data integrity and interpretation. EDA tools which support iRCX format will be able to receive accurate interconnect modeling data from the iRCX files developed and supported by TSMC.
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Jazz Semiconductor's DIRECT Multiproject Wafer (MPW) Shuttle Program Enables Rapid Design Verification and Faster Time-to-Market (Wednesday May. 27, 2009)
Jazz Semiconductor today announced its DIRECT Multiproject Wafer (MPW) shuttle program offering customers quick and low-cost prototyping with access to high performance processes. The program provides a vehicle to develop new designs in CMOS, SiGe and SOI and bring these to market quickly, without incurring the full cost of a complete mask set.