ASRC-Pro : 24-bit -130dB THD+N Multi-Channel Audio Sample Rate Converter
TSMC Creates Design Options for New 3nm Node
By Alan Patterson, EETimes (June 22, 2022)
Taiwan Semiconductor Manufacturing Co. (TSMC) has created versions of its upcoming 3nm FinFET node that’s ramping up later this year, allowing chip designers to enhance performance, power efficiency, and transistor density — or select a balance of those options.
TSMC’s 3nm technology, starting production later in 2022, will feature the company’s FinFlex architecture offering choices of standard cells with a 3–2 fin configuration for performance, a 2–1 fin configuration for power efficiency and transistor density, or a 2–2 fin configuration for efficient performance.
E-mail This Article | Printer-Friendly Page |
|
Related News
- TSMC Expansion in Arizona to Target 3-nm Node
- Keysight, Synopsys, and Ansys Deliver Radio Frequency Design Migration Flow to TSMC's N6RF+ Process Node
- GUC Taped Out UCIe 32G IP using TSMC's 3nm and CoWoS Technology
- Sofics releases its ESD technology on TSMC 3nm process
- MediaTek Successfully Develops First Chip Using TSMC's 3nm Process, Set for Volume Production in 2024