Apr. 14, 2017 - NXP will ship this year as many as five SoCs made in Samsung’s 28nm fully depleted silicon-on-insulator (FD-SOI) process, including one that has been sampling for six months. Samsung is expected to announce its FD-SOI roadmap in May and is already working on RF and in-house embedded MRAM for it.

Mar. 20, 2017 - To do FD-SOI or not to do FD-SOI? NXP Semiconductors’ announcement this week at Embedded World in Nuremberg might finally put an end to this Shakespearean quandary, although there remain players in the chip industry unprepared to face the answer.

Mar. 13, 2017 - NXP Semiconductors N.V. (NASDAQ:NXPI) is first to market with a new applications processor design that leverages Fully Depleted Silicon On Insulator (FD-SOI) technology to offer the industry’s lowest power consuming general-purpose processor.

Feb. 27, 2017 - Advanced driver assistance system (ADAS) computer vision SoC developed for European THINGS2DO project with working first silicon fabricated on GLOBALFOUNDRIES’ 22nm FD-SOI Platform

Feb. 20, 2017 - Globalfoundries Inc. (Santa Clara, Calif.) has said it will invest in increasing its manufacturing capacity both at existing wafer fabs and by building a 300mm wafer fab in China through a joint venture with the Chengdu Municipality.

Oct. 06, 2016 - Without any visible end products to justify its proponents’ ultra-low-energy promise, FD-SOI has struggled to overcome the skepticism of many engineers in the semiconductor industry.

Sep. 09, 2016 - Synopsys and GLOBALFOUNDRIES today announced that Synopsys has joined the foundry's FDXcelerator™ Partner Program, an ecosystem designed to facilitate 22FDX™ system-on-chip (SoC) designs.

Sep. 08, 2016 - GLOBALFOUNDRIES today unveiled a new 12nm FD-SOI semiconductor technology, extending its leadership position by offering the industry’s first multi-node FD-SOI roadmap. Building on the success of its 22FDXTM offering, the company’s next-generation 12FDXTM platform is designed to enable the intelligent ...

Jul. 26, 2016 - Samsung Foundry is going to offer both spin torque transfer magnetic RAM (STT-MRAM) and flash as embedded non-volatile memory options on its 28nm FDSOI manufacturing process.

May. 30, 2016 - The fully-depleted silicon-on-insulator (FDSOI) chip manufacturing process championed by STMicroelectronics has become almost the default choice for digital manufacturing within the automotive and discrete group (ADG) business unit at ST, according that group's senior executive.

May. 25, 2016 - The 22FDX fully-depleted silicon-on-insulator (FDSOI) process developed by Globalfoundries Inc. (Santa Clara, Calif.) is on track to debut later this year and the company is working on the follow-on process, according to chief technology officer Gary Patton.

Apr. 18, 2016 - The ecosystem for fully-depleted silicon on insulator (FD-SOI) process technology has tipped from a too-late technology to a viable alternative to FinFETs for the Internet of Things (IoT) and automotive markets. To many, the presence of officials from major companies at an industry event signaled a ...

Apr. 05, 2016 - Reporters find it easier to write about Donald Trump, Apple and FinFET. When it comes to FD-SOI, not so much.

Jan. 29, 2016 - If Samsung’s latest smartphone TV commercial (which touts a number of superior camera features and ends with a tagline -- “It's Not a Phone, It's a Galaxy”) is any indication, the ingredient that matters most in smartphones today isn’t the phone. It’s the camera.

Jan. 28, 2016 - STMicroelectronics' withdrawal from the set-top-box business and the transfer of engineers to microcontroller and digital automotive work will not stop the adoption of fully-depleted silicon-on-insulator (FDSOI) manufacturing process, according to Jean-Marc Chery, ST's chief operating officer.

Jan. 22, 2016 - For chip designers pondering the next-node choices for their new SoCs, the FD-SOI Forum held here Thursday (Jan. 21) yielded news they could use.

Jan. 19, 2016 - NXP is set to extend the use of 28nm fully-depleted silicon-on-insulator (FDSOI) process technology down to its low-power LPC microcontrollers, according to Goeff Lees, newly installed as general manager of MCU business at NXP Semiconductors NV.

Jan. 19, 2016 - The compiler supports the company's low power, Single Port SRAM IP and Dual Port SRAM IP for 28nm FDSOI process technology. It offers capacities up to 1Mbit with word lengths up to 288bits and supports 4, 8 and 16 Mux factors.

Dec. 24, 2015 - Samsung is running 28nm fully-depleted silicon-on-insulator (FDSOI) wafers for STMicroelectronics, the developer of the technology, and has other customers lined up, according to an Advanced Substrate News report.

Dec. 21, 2015 - French research institute CEA-Leti has reported on two techniques to put local strain in the silicon channel of a fully-depleted silicon-on-insulator (FDSOI) manufacturing process.

Sep. 18, 2015 - China is not exactly falling in love with fully depleted silicon on insulator (FD-SOI) technology, but it became clear at the Shanghai FD-SOI Forum this week that the semiconductor industry in Asia is warming up to the idea.

Jul. 17, 2015 - Customer interest is unusually high in Globalfoundries’ newly announced 22nm fully depleted silicon-on-insulator (FD-SOI) manufacturing platform, which could be in high-volume manufacturing by the middle of 2017, a company executive said at the Semicon West tradeshow here.

Jul. 14, 2015 - With its latest news Globalfoundries Inc. has not only confirmed itself as a supporter of the fully-depleted silicon-on-insulator (FD-SOI) approach to IC manufacturing but that it also thinks sufficiently highly of the technology that it wants it own exclusive processes to address a swathe of low power ...

Jul. 13, 2015 - The “22FDX™” platform delivers FinFET-like performance and energy-efficiency at a cost comparable to 28nm planar technologies, providing an optimal solution for the rapidly evolving mainstream mobile, Internet-of-Things (IoT), RF connectivity and networking markets.

Jul. 06, 2015 - Ron Martino, vice president of application processors and advanced technology for Freescale's MCUs says there is room both both FinFETs, FD-SOI and combinations of the two.

Jun. 30, 2015 - Paul Boudre, CEO of Soitec, told us last week in Grenoble, "Evidence [for FD-SOI's advantages] is there. But some choose not to see it."

Jun. 26, 2015 - Annual open-house events hosted by the two premier R&D centers in Europe — CEA-Leti (Grenoble, France) and IMEC (Leuven, Belgium) — collided this year on the same dates in June.

Jun. 24, 2015 - The appearance of Gerd Teepe, director and design engineering at GlobalFoundries, at a CEA-Leti-sponsored FD-SOI workshop here has confirmed, once again, rumors surrounding the company’s upcoming “big announcement” about FD-SOI.

Jun. 12, 2015 - As a reporter, I sometimes come across a thread — often consisting of offhand comments, random facts, tweets, tradeshow panels or p.r. propaganda — that actually, eventually, helps me connect the dots.

Jun. 09, 2015 - CEA-Leti announced today that seven partners have joined its new FD-SOI IC development program, Silicon Impulse, launched to provide a comprehensive IC technology platform that offers IC design, advanced intellectual property, emulator and test services along with industrial multi-project wafer (MPW) ...

Jun. 04, 2015 - Sankalp Semiconductor announced that it has signed an agreement with STMicroelectronics to serve as an FD-SOI Services and IP Partner.

May. 28, 2015 - sureCore Ltd. today announced the immediate commercial availability of its first, ultra-low power, embedded SRAM IP. The new, silicon proven, 28nm FDSOI production design targets applications demanding long battery life with minimal operating and stand-by power performance.

Apr. 16, 2015 - Just days after it was confirmed the Samsung Galaxy S6 uses an Exynos processor made in Samsung's 14nm FinFET process, a Samsung executive talked about the company's road to 14nm.

Mar. 02, 2015 - Freescale, Cisco and Ciena have defied the general skepticism of fully-depleted silicon-on-insulator (FD-SOI) by revealing their own experience with the process technology, creating expectations that more companies might follow.

Feb. 02, 2015 - Sony Corp. revealed that the company’s next-generation Global Navigation Satellite System (GNSS) chip will use 28-nm Fully Depleted Silicon On Insulator (FDSOI) process.

Jan. 02, 2015 - A collaborative European microserver project has teamed processor IP licensor ARM and chipmaker STMicroelectronics up with a number of academic and commercial computer and software specialists to try and make technical progress in microservers.

Sep. 15, 2014 - CWS today announced that STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, is using WaveIntegrity tools to help ST remove the risks caused by on-chip, package, and PCB noise parasitics.

Jun. 04, 2014 - Synopsys today announced it has extended its collaboration with STMicroelectronics to include Samsung Electronics, enabling broader market adoption of ST's 28-nm FD-SOI technology for SoC design.

May. 16, 2014 - The announcement that Samsung will license the FDSOI chip manufacturing process as an option at the 28nm node both for foundry customers and for its own chips is, of course, excellent news for FDSOI pioneer STMicroelectronics. It is also good news for fans of technology, and for advocates of choice. ...

May. 15, 2014 - Cadence today announced the immediate availability of two IP solutions for third-party designs on the 28nm FD-SOI process node that is accessible via the recently announced agreement between STMicroelectronics and Samsung Electronics.